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Photodiodes for 1.5-3.8 µm spectral range
The PD36 series of photodiodes for 1.5-3.8 µm spectral range are produced on the base of the InAs/InAsSbP heterostructure. The main advantage of this heterostructure is high crystalline quality of epitaxial layers with low density of dislocations (104 cm–2). The doping level of the active GaInAsSb layer (up to 1015-1016 cm–3) makes it possible to reach low capacity and high response speed for PDs. Photodiodes are manufactured with the sensitive area diameters from 100 µm to 2 mm.
- Main applications:
- - Diode-Lasers spectroscopy;
- - Environmental monitoring;
- - Medicine;
- - Remote non-contact temperature measurements;
- - Detection of the burning or explosion products.
PDs 1.5-3.8 µm | Sensitive Area Diameter (mm) | Package | Wavelength Range (µm) | Detectivity (cm∙Hz1/2∙W−1) | |
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Series | Model | ||||
PD36 | 0.1 | TO-18 TO-18 TO-18 TO-5 TO-5 |
1.0-3.6 (3.8) | (3-6)∙109 | |
0.2 | TO-18 TO-18 TO-18 TO-5 TO-5 |
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0.3 | TO-18 TO-18 TO-18 TO-5 TO-5 |
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PD36-05 |
0.5 | TO-18F TO-18F TO-18F TO-5 TO-5 TO-8 |
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PD36-10 |
1.0 | TO-18FM TO-18FM TO-18FM TO-5 TO-5 |
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2.0 | TO-5 TO-5 TO-5 |
Test Results of IR detectors PD36-03
PDXX-YY – PD model in TO-18 package PDXX-YYY-HS – High Speed PD model in SMA package PDXX-YY-HS – High Speed model in TO-18 or TO-46 package PDXX-YY-PR – PD model in TO-18 with parabolic reflector PDXX-YY-PRW – PD model in TO-18 package with parabolic reflector PR and quartz/or sapphire window W PDXX-YY-TEC – PD model in TO-5 package with thermocooler TEC and a cap PDXX-YY-TEC-PRW – PD model in TO-5 package with thermocooler TEC, parabolic reflector PR and quartz/or sapphire window W AMPXX-YY (with PDXX) – PD model with build-in amplifier AMP and thermocooler TEC